IndiumV3, Main, Repository, bibRecord, 014208

Pseudo-closed box diffusion of Zn into InGaAsSb and AlGaSb for TPV devices

Identifieur interne : 014208 ( Main/Repository ); précédent : 014207; suivant : 014209

Pseudo-closed box diffusion of Zn into InGaAsSb and AlGaSb for TPV devices

Auteurs : RBID : Pascal:99-0281833

Descripteurs français

Pascal (Inist)
- 8460J, 6630J, 8115L, 8920, 8165C, Etude expérimentale, Conversion directe énergie, Semiconducteur III-V, Gallium arséniure, Indium composé, Antimoine composé, Epitaxie phase liquide, Aluminium composé, Zinc, Diffusion(transport), Préparation matériau, Gravure.
Wicri :
- concept : Zinc.

English descriptors

KwdEn :
- Aluminium compounds, Antimony compounds, Diffusion, Direct energy conversion, Etching, Experimental study, Gallium arsenides, III-V semiconductors, Indium compounds, LPE, Materials preparation, Zinc, thermophotovoltaic cells.

Abstract

The first systematic study of Zn diffusion into InGaAsSb and AlGaSb is presented. The diffusion parameters, which provide good control over p-n junction depth, are determined. Anodic oxidation of In_0.15Ga_0.85As_0.17Sb_0.83 is investigated. InGaAsSb/GaSb photovoltaic (PV) cells were fabricated using two technologically simple methods: Liquid phase epitaxy and pseudo-closed box diffusion. The measured open-circuit voltage is the higher ever published for PV-cells with E_g∼0.55eV. © 1999 American Institute of Physics.

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Pascal:99-0281833

Le document en format XML

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<author><name sortKey="Bett, Andreas W" uniqKey="Bett A">Andreas W. Bett</name>
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<author><name sortKey="Ber, Boris Y" uniqKey="Ber B">Boris Y. Ber</name>
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<author><name sortKey="Mauk, Michael G" uniqKey="Mauk M">Michael G. Mauk</name>
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<author><name sortKey="South, Joseph T" uniqKey="South J">Joseph T. South</name>
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<author><name sortKey="Sulima, Oleg V" uniqKey="Sulima O">Oleg V. Sulima</name>
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<term>Etude expérimentale</term>
<term>Conversion directe énergie</term>
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<front><div type="abstract" xml:lang="en">The first systematic study of Zn diffusion into InGaAsSb and AlGaSb is presented. The diffusion parameters, which provide good control over p-n junction depth, are determined. Anodic oxidation of In<sub>0.15</sub>
Ga<sub>0.85</sub>
As<sub>0.17</sub>
Sb<sub>0.83</sub>
 is investigated. InGaAsSb/GaSb photovoltaic (PV) cells were fabricated using two technologically simple methods: Liquid phase epitaxy and pseudo-closed box diffusion. The measured open-circuit voltage is the higher ever published for PV-cells with E<sub>g</sub>
∼0.55eV. © 1999 American Institute of Physics.</div>
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As<sub>0.17</sub>
Sb<sub>0.83</sub>
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Pseudo-closed box diffusion of Zn into InGaAsSb and AlGaSb for TPV devices

Pseudo-closed box diffusion of Zn into InGaAsSb and AlGaSb for TPV devices

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri